Course #20

Advanced Course on Image Sensor Technology

November 22-23, 2010. Barcelona, Spain

INSTRUCTOR
Professor Dr. Albert J. P. Theuwissen, 
Delft University of Technology, Delft, The Netherlands
Harvest Imaging, Belgium

TECHNOLOGY FOCUS 
Highly sophisticated CMOS image sensors are key components of modern cameras. Technology as well as device architectures are optimized to obtain peak performance of the image sensor and the camera system. The most advanced CMOS image sensors show pixel sizes close to 1 µm. The imagers demonstrate a light sensitivity comparable to that of the human eye. 

Another feature, the back-side illumination, is no longer limited to high-end professional applications. In addition, the modern camera systems can present a dynamic range of 100 dB or more. The equivalent noise level is in the range of sub-electron noise. Even if all these incredible features cannot be combined in one single CMOS image sensor simultaneously, they will allow for new technology breakthroughs and new imaging applications. 

Furthermore, the image sensor fabrication technology is not yet pushed to its ultimate limits. Image sensors make use of CMOS technologies that are lagging 2 or 3 generations behind those of digital integrated circuits or solid-state memories. Even more interesting developments can thus be expected in the near future. It has still to be proven that imagers can break the 1 µm barrier. Will imagers ever outperform the human eye as far as light sensitivity is concerned? 

COURSE CONTENT AND OBJECTIVES 
This is an advanced course focussing on the solid-state image sensor technology. It is intended for the specialists in the field. A very good background of digital imaging is needed to get the most out of this course. It can be regarded as a continuation of Course #13 Digital Imaging: Image Capturing Image Sensors, Technologies and Applications. The content is based on comments, suggestions, and remarks received from previous participants in courses #13 and #14 Digital Camera Systems. 

Monday

CMOS PIXELS 

Pinned Photodiode 
What is new in CMOS image sensor pixels after the introduction of the pinned photodiode? The pinning layer created a real breakthrough in CMOS imaging, but does the pixel development stop with the pinned photodiode? 

An interesting concept to create very small pixels is the so-called shared pixel architecture, primarily based on pinned photodiodes as well. Advantages and disadvantages of the shared pixels will be discussed. 

Global Shutter Pixels 
The Rolling Shutter is still an issue in imagers that are being used for instance in broadcast, machine vision, and other applications. What are the alternatives in pixel design to turn the rolling shutter into a global shutter? Pixels with 4, 5, 6 and 7 transistors will be compared to each other. 

Wide-Dynamic Range Pixels 
Pixels are getting smaller and the specs on dynamic range are becoming tighter. What kind of architectures can be implemented to extend the dynamic range? 

Back-Side Illumination 
Backside illumination to obtain extremely high quantum efficiencies is becoming very popular. Several fabrication methods will be compared. A crucial part of the technology is the passivation of the backside of the sensors. The background of the passivation issues will be highlighted. 

Tuesday

CMOS IMAGER SYSTEMS 

Noise on Pixel Level 
At present, the pixels and the in-pixel circuitry are the limiting noise factors. From where is the remaining noise coming? What kind of new developments can be expected? Topics such as Transfer Gate noise, RTS noise and 1/f noise will be discussed. 

Noise on System Level 
Noise can be used as an interesting measurement tool in the so-called Photon Transfer Curve method. Parameters such as conversion gain, dynamic range, saturation level, noise floor, quantum efficiency, PRNU can be deduced. If the method is performed in darkness, dark current levels as well as DRNU can be measured. Further elaboration of the method will explain that this technique is not only a useful measurement tool but a diagnostic tool as well. 

Electron Multiplication
In case of extremely low light level, the EM-CCD is a very interesting and powerful image sensor. This device is characterized by the fact that an electron multiplication stage is included just before the output amplifier. In this way a gain can be applied to the signal in the CCD without amplifying the noise of the output stage. Equivalent noise levels of sub-electrons are being reported.

Regular Course Fee: EUR 1310

Early Registration Course Fee:  EUR 1180
This applies to firm registrations received 2 months before course start. 

University Student and Faculty Rate:
Two university participants are welcome to attend for one course fee if payment is to be made from university funds.

Deliverables:
The course fee covers tuition, course material, and the day conference packages (morning/afternoon refreshments, lunches etc.) paid on your behalf to the course venue. Accommodation is not included.

Payment should be made before course start.