Course #61
IC Reliability, Yield, Failure Analysis, and Fault Isolation
October 8 - 12, 2012
. Dresden, Germany
We recommend you to submit your
preliminary or firm registration at least 4 weeks before course
start to ensure a seat on the course.
(Previously this course was called
Yield and Reliability in VLSI Development and
Manufacturing)
TECHNOLOGY FOCUS
Reliability, failure analysis and yield are three of the
cornerstones of a successful IC manufacturing technology along with
product performance and cost. Many factors contribute to the
achievement of high yield and reliability, and many of these also
interact with product performance and cost.
A fundamental understanding of failure mechanisms and yield
limitations enables the up-front achievement of these technology
goals through circuit and layout design, device design, materials
choices, process optimization, and thermo-mechanical
considerations. Failure isolation and analysis, defect analysis,
low yield analysis, and materials analysis are critical
methodologies for the improvement of yield and reliability.
Coordination of people in many disciplines is needed in order to
achieve high yield and reliability. Each needs to understand the
impact of their choices and methods on the final product.
Unfortunately, very little formal university training exists in
these critical areas of IC reliability, yield, and failure
analysis.
WHO SHOULD ATTEND
This course will be of strong interest to engineers
working in semiconductor R&D and manufacturing, equipment
service, and also procurement of product from foundries. It will be
relevant both for companies producing integrated circuits
themselves and for those involved as partners in the
"fabless/foundry" model.
Monday - JOSÉ MAIZ
Reliability Fundamentals and Scaling
Principles
- The Reliability Bathtub Curve, Its Origin and Implications
- Key Reliability Functions and Their Use in Reliability
Analysis
- Defect Screening Techniques and Their Effectiveness
- Accelerated Testing and Estimation of Useful Operating
Life
- Reliability Data Collection and Analysis in Integrated
Circuits
- Past Technology Scaling Trends
- Forward Looking Projections with a Focus on Examining and
Understanding of the Impact on VLSI Reliability
- Power Density Trends: Operating temperature, activation
energies for dominant vlsi failure mechanisms, and reliability
impact
- Reliability Strategies In Fabless Environments
Reliability of the Interconnect System
- Physics and Statistics of Failure Mechanisms Associated with
Interconnect Systems
- Electro-migration of Al and Cu Interconnects
- Mechanical Stress Driven Metal Voiding and Cracking
- Low k Materials as Interlayer Dielectrics and Their Impact on
Electro-migration
- Thermo-mechanical Integrity of the Interconnect System
- Key Technology Parameters: Materials choices, structural and
geometric effects
- Extreme Scaling Impact on Wear-out Time
- Technology Solutions: Alloys, metal barriers, and engineering
of interfaces
- Improved Electro-migration Performance under Non-DC Currents
and Short Lines
- Interconnect Reliability Strategies in Fabless
Environments
Tuesday - JOSÉ
MAIZ
Transistor Reliability: Dielectric Breakdown, Hot Carriers
and Parametric Stability
- Physics, Statistics, and Scaling Impact on Failure
Mechanisms
- Reliability Performance of Thin Conventional Oxides: Defects,
wear-out failures
- Hot Carrier Performance and Parametric Stability of P- and
N-channel Devices under DC and AC
- High k Gate Dielectrics and Novel Transistor
Configurations
- Key Failure Mechanisms for Bipolar Transistors
- Transistor Reliability Strategies in Fabless Environments
CMOS Latch-up and ESD
- Physics, Scaling Impact, and Technology Dependence of CMOS
Latch-up and Electrostatic Damage (ESD)
- Technology and Design Based Solutions, Device Performance, and
Manufacturability Constraints
- Latch-up and ESD Assessment in Fabless Environments
Soft Errors, and Other Failure Mechanisms
- Physics, Scaling Impact, and Technology Dependence of Alpha
Particle and Cosmic Ray Induced Soft Errors
- Technology Solutions, Performance, and Manufacturability
Wednesday - CHRISTOPHER
McDONALD
Yield Elements
- The Importance of Yields to the Financial Success of a
Semiconductor Manufacturer
- Data of Typical Yields Obtained in the Industry for Different
Product Generations
- The Concept of Yield Modeling, Showing Defects and Other
Mechanisms Affecting Yields
- Process and Equipment Defect Details: Lithography, oxidation,
thin film deposition, etching, and wafer cleaning
- Other Defect Sources: Clean-room materials and environment
- Yield Issues: Electrical parameter distributions and physical
device structures
- Practical Examples: How Yields are Impacted by
Various Types of Phenomena
Yield Management and Improvement
- Attributes Possessed by "High Yield" Wafer Fabrication
Lines
- In-line Measurement Techniques for Process Control and
Improvement: Particle detection and loop structures
- Examples: Successfully Applied Techniques to Improve
Yields
- Control
- Software Techniques for Detecting Significant Patterns in Yield
Data
- Yield Impacting Factors: How continuous improvements can be
made
- Special Topics of Interest
Process Control and Troubleshooting
- Statistical Process Control (SPC)
- Advanced Process Control (APC)
- Defect Control
- Pit falls and human factors in a successful SPC
implementation
Thursday - DAVID
VALLETT
Introduction to Semiconductor Failure
Analysis
- The role of Failure Analysis in Semiconductor Technology
Development and Manufacturing
- Differing Failure Analysis strategies for Technology
Development, Yield Analysis, Reliability Engineering
- Client Support and Failure Analysis of Field Returns
- Analytical approaches for Package, Wafer, and Die Level
failures
IC Failure Modes and Defects
- Electrical failure modes of logic, SRAM, DRAM, and analog/mixed
signal devices
- Defect mechanisms in ICs and IC packages
- Defects in Design, Processing, and Lithography
- Failures due to Process/product interactions
- Test-induced defects
Friday - DAVID
VALLETT
Fault Isolation and Failure Analysis
Techniques
- Physical Fault Isolation Techniques: Electron, ion, and laser
scanning microscopy; photon emission, thermal and magnetic imaging;
scanning probe microscopy
- Electrical Characterization: Micro- and nano-probing
- Chemical, Mechanical, and Ion Beam Deprocessing
- Optical, acoustic, scanned probe, electron, and X-ray
microscopy/tomography
- Materials Analysis Overview
- Particle Beam Interactions in Solids
- Bulk Composition Analysis: Energy and wavelength dispersive
spectroscopy
- Principles of Electron, Ion, and X-ray Techniques: TEM, AES,
SIMS, XPS, and TXRF
- Sensitivity and Resolution Comparisons
- Technique Selection Factors
Practical Applications and Future
Challenges
- Case-histories and Examples: Time-resolved photon emission
movies of operating devices; nanoscale 3D X-ray tomography virtual
sections; defects; fault isolation results, etc.
- Planning for Analysis to Maximize Effectiveness
- Scaling and Material Challenges in Analytical Science
- Planning for Analysis to Maximize Effectiveness
- Scaling and Material Challenges in Analytical Science
Said about
the course from previous participants:
"The energy and enthusiasm of the lecturers - all of
which, I suspect, put a lot of effort into keeping their courses
fresh. Course was very comprehensive with stress being placed on
the relevant topics, sufficient to obtain a very good overview from
reliability right through."
"Open discussions, discussions about problems of my colleagues,
meeting colleagues from other companies (networking), teachers
giving examples from their work."
"Variety of topics, good explanation skills of the Instructors,
huge experience of Instructors."
"Teachers did know their areas!"
"Well-organized, approachable presentation, supply of dense
information, openness for questions and discussion, platform for
exchange with professionals in related functions."