PhD, Fraunhofer Institute for Non-Destructive Testing
(IZFP), Dresden, Germany
Dr Gall is currently department head of Materials and
Reliability for Micro- and Nanoelectronics at the Fraunhofer
Institute for Non-Destructive Testing in Dresden, Germany. He
received the title of Diplomphysiker (M.S. in physics) from the
Rheinisch-Westfaelische Technische Hochschule Aachen, Germany, in
1992, and a PhD in materials science and engineering from The
University of Texas at Austin in 1999. He joined Freescale
Semiconductor/Motorola in 1995 and has since been working in the
area of backend reliability, mainly addressing issues with
electromigration, stress-induced voiding, and time-dependent
dielectric breakdown. Most of his dissertation work was
conducted at Motorola's Advanced Products Research and Development
Laboratory. In mid-1999, he joined The Technical University at
Delft, The Netherlands, for a one-year assignment as a visiting
scientist. Upon his return to Freescale Semiconductor/Motorola, he
continued backend reliability development for the 130 and 90 nm
technology nodes. From 2002 until 2009, he led the
interconnect reliability team in the Technology Solutions
Organization, mainly focusing on implementation of advanced, low-k
dielectrics in the 65, 45, 32 and 22 nm nodes. From 2007
until 2009, he was assigned to the IBM/Freescale Technology
Alliance in Yorktown Heights and Hopewell Junction, NY. He
relocated back to Europe in 2010 to join Globalfoundries and
subsequently the Fraunhofer Institute. He has (co)authored
about 50 papers and serves as a technical committee member and
reviewer for leading conferences and journals.
Dr Gall has been a member of the CEI-Europe Faculty since
2005.
Course #75
Chip Interconnection Technology and Process
Integration