Gall, Martin - CEI-Europe

Gall, Martin

PhD, Fraunhofer Institute for Ceramic Technologies and Systems (IKTS), Dresden, Germany.

Dr. Gall is currently department head of Materials and Reliability for Micro- and Nanoelectronics at the Fraunhofer Institute for Non-Destructive Testing in Dresden, Germany.  He received the title of Diplomphysiker (M.S. in physics) from the Rheinisch-Westfaelische Technische Hochschule Aachen, Germany, in 1992, and a PhD in materials science and engineering from The University of Texas at Austin in 1999.  He joined Freescale Semiconductor/Motorola in 1995 and has since been working in the area of backend reliability, mainly addressing issues with electromigration, stress-induced voiding, and time-dependent dielectric breakdown.  Most of his dissertation work was conducted at Motorola's Advanced Products Research and Development Laboratory. In mid-1999, he joined The Technical University at Delft, The Netherlands, for a one-year assignment as a visiting scientist. Upon his return to Freescale Semiconductor/Motorola, he continued backend reliability development for the 130 and 90 nm technology nodes.  From 2002 until 2009, he led the interconnect reliability team in the Technology Solutions Organization, mainly focusing on implementation of advanced, low-k dielectrics in the 65, 45, 32 and 22 nm nodes.  From 2007 until 2009, he was assigned to the IBM/Freescale Technology Alliance in Yorktown Heights and Hopewell Junction, NY.  He relocated back to Europe in 2010 to join Globalfoundries and subsequently the Fraunhofer Institute.  He has (co)authored about 50 papers and serves as a technical committee member and reviewer for leading conferences and journals.

Dr. Gall has been a member of the CEI-Europe Faculty since 2005.

Course #76 On-Chip and 3D Interconnects - Technology, Performance and Reliability

Course #75 Chip Interconnection Technology and Process Integration

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